MRF7S35120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
02052510
15
30
35
0.1
1000
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
1
100
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
10
1
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
100
TJ
= 200°C
TJ
= 150°C
TJ
= 175°C
13
3
5
10
12
11
50
41
32
23
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
8
200
48
56
36
55
54
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
53
52
51
50
37 43 4438 39 40 41 42 45
P
out
, OUTPUT POWER (dBm) PULSED
P3dB = 52 dBm (157 W)
Actual
Ideal
P2dB = 51.7 dBm (149 W)
8
14
1
13
12
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
10
11
IDQ
= 1000 mA
200
150 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
26 VV
DD
=24V
6
13
3
7
12
11
10 200100
49
10
10
9
500 mA
300 mA
10
9
8
VDD
=32Vdc,IDQ
= 150 mA
Pulse Width = 100
μsec
Duty Cycle = 20%
IDQ
= 150 mA, f = 3500 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
VDD
=32Vdc,IDQ
= 150 mA, f = 3500 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
VDD
= 32 Vdc, f = 3500 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
100
9
100
14
Gps
f = 3500 MHz
ηD
3300 MHz
3100 MHz
P1dB = 51.3 dBm (135 W)
100
28 V
30 V
32 V
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